MOSFET onsemi canal N, D2PAK (TO-263) 40 A 650 V, 3 broches
- Code commande RS:
- 178-4423
- Référence fabricant:
- NTB082N65S3F
- Marque:
- onsemi
En cours d'approvisionnement
Prix pour la pièce
3,88 €
HT
4,66 €
TTC
Unité | Prix par unité |
|---|---|
| 1 + | 3,88 € |
- Code commande RS:
- 178-4423
- Référence fabricant:
- NTB082N65S3F
- Marque:
- onsemi
Documentation technique
Législation et Conformité
- Pays d'origine :
- CN
Détail produit
SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.
Features
700 V @ TJ = 150
Ultra Low Gate Charge (Typ. Qg = 81 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 722 pF)
Optimized Capacitance
Excellent body diode performance (low Qrr, robust body diode)
Typ. RDS(on) = 70 mΩ
Benefits:
Higher system reliability at low temperature operation
Lower switching loss
Lower switching loss
Lower peak Vds and lower Vgs oscillation
Higher system reliability in LLC and Phase shift full bridge circuit
Applications:
Telecommunication
Cloud system
Industrial
End Products:
Telecom power
Server power
Solar / UPS
EV charger
700 V @ TJ = 150
Ultra Low Gate Charge (Typ. Qg = 81 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 722 pF)
Optimized Capacitance
Excellent body diode performance (low Qrr, robust body diode)
Typ. RDS(on) = 70 mΩ
Benefits:
Higher system reliability at low temperature operation
Lower switching loss
Lower switching loss
Lower peak Vds and lower Vgs oscillation
Higher system reliability in LLC and Phase shift full bridge circuit
Applications:
Telecommunication
Cloud system
Industrial
End Products:
Telecom power
Server power
Solar / UPS
EV charger
Caractéristiques techniques
Attribut | Valeur |
|---|---|
| Type de canal | N |
| Courant continu de Drain maximum | 40 A |
| Tension Drain Source maximum | 650 V |
| Type de boîtier | D2PAK (TO-263) |
| Type de montage | CMS |
| Nombre de broches | 3 |
| Résistance Drain Source maximum | 82 mΩ |
| Mode de canal | Enrichissement |
| Tension de seuil maximale de la grille | 5V |
| Tension de seuil minimale de la grille | 3V |
| Dissipation de puissance maximum | 313 W |
| Configuration du transistor | Simple |
| Tension Grille Source maximum | ±30 V |
| Longueur | 10.67mm |
| Température d'utilisation maximum | +150 °C |
| Charge de Grille type @ Vgs | 81 nC @ 10 V |
| Largeur | 9.65mm |
| Nombre d'éléments par circuit | 1 |
| Tension directe de la diode | 1.3V |
| Température de fonctionnement minimum | -55 °C |
| Hauteur | 4.58mm |
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