Mémoire flash, SPI, CFI NOR, 128 Mo Infineon, 8 broches, SOIC
- Code commande RS:
- 184-0086
- Référence fabricant:
- S25FS128SAGMFI100
- Marque:
- Infineon
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
- Code commande RS:
- 184-0086
- Référence fabricant:
- S25FS128SAGMFI100
- Marque:
- Infineon
Caractéristiques techniques
Documentation technique
Législation et Conformité
Détail produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Taille de la mémoire | 128Mo | |
| Type de produit | Mémoire flash | |
| Type d'interface | SPI, CFI | |
| Type de Boitier | SOIC | |
| Nombre de broches | 8 | |
| Configuration | 16M x 8 bits | |
| Type de montage | En surface | |
| Type de cellule | NOR | |
| Tension d'alimentation maximum | 2V | |
| Tension d'alimentation minimum | 1.7V | |
| Température minimum de fonctionnemen | -40°C | |
| Température d'utilisation maximum | 85°C | |
| Longueur | 5.28mm | |
| Largeur | 5.28mm | |
| Hauteur | 1.9mm | |
| Normes/homologations | RoHS | |
| Nombre de mots | 16M | |
| Série | S25Fl128 | |
| Nombre de bits par mot | 8 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Taille de la mémoire 128Mo | ||
Type de produit Mémoire flash | ||
Type d'interface SPI, CFI | ||
Type de Boitier SOIC | ||
Nombre de broches 8 | ||
Configuration 16M x 8 bits | ||
Type de montage En surface | ||
Type de cellule NOR | ||
Tension d'alimentation maximum 2V | ||
Tension d'alimentation minimum 1.7V | ||
Température minimum de fonctionnemen -40°C | ||
Température d'utilisation maximum 85°C | ||
Longueur 5.28mm | ||
Largeur 5.28mm | ||
Hauteur 1.9mm | ||
Normes/homologations RoHS | ||
Nombre de mots 16M | ||
Série S25Fl128 | ||
Nombre de bits par mot 8 | ||
- Pays d'origine :
- US
Density
S25FS128S-128 Mbits (16 MB)
S25FS256S-256 Mbits (32 MB)
Serial Peripheral Interface (SPI)
SPI Clock polarity and phase modes 0 and 3
Double Data Rate (DDR) option
Extended Addressing: 24- or 32-bit address options
Serial Command subset and footprint compatible with S25FL-A, S25FL-K, S25FL-P, and S25FL-S SPI families
Multi I/O Command subset and footprint compatible with S25FL-P, and S25FL-S SPI families
Read
Commands: Normal, Fast, Dual I/O, Quad I/O, DDR Quad
I/O
Modes: Burst Wrap, Continuous (XIP), QPI
Serial Flash Discoverable Parameters (SFDP) and Common Flash Interface (CFI), for configuration information
Program
256- or 512-byte Page Programming buffer
Program suspend and resume
Automatic ECC internal hardware Error Correction Code generation with single-bit error correction
Erase
Hybrid sector options
Physical set of eight 4-KB sectors and one 32-KB sector at the TOP or bottom of address space with all remaining sectors of 64 KB or
Physical set of eight 4-KB sectors and one 224-KB sector at the TOP or bottom of address space with all remaining sectors of 256 KB
Uniform sector options
Uniform 64-KB or 256-KB blocks for software
compatibility with higher density and future devices
Erase suspend and resume
Erase status evaluation
100,000 Program-Erase Cycles, minimum
20 Year Data Retention, minimum
Security Features
One-Time Program (OTP) array of 1024 bytes
Block Protection:
Status Register bits to control protection against
program or erase of a contiguous range of sectors
Hardware and software control options
Advanced Sector Protection (ASP)
Individual sector protection controlled by boot code or password
Option for password control of read access
Technology
Cypress 65 nm MirrorBit® Technology with Eclipse™
Architecture
Supply Voltage
1.7V to 2.0V
Packages (All Pb-Free)
8-lead SOIC 208 mil (SOC008) — FS128S only
WSON 6 x 5 mm (WND008) — FS128S only
WSON 6 x 8 mm (WNH008)
16-lead SOIC 300 mil (SO3016 — FS256S only)
BGA-24 6 x 8 mm
5 x 5 ball (FAB024) footprint
4 x 6 ball (FAC024) footprint
Known Good Die, and Known Tested Die